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IXFN120N20 HiPer FET Power MOSFETs
型号:   IXFN120N20
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描述:   HiPer FET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
IXFN 120N20
V
DSS
I
D25
R
DS(on)
= 200 V
= 120 A
=
17 mW
t
rr
£
250 ns
Maximum Ratings
200
200
±20
±30
120
480
120
64
3
5
600
-55 ... +150
150
-55 ... +150
-
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
200
2
V
4 V
±200
nA
T
J
= 25°C
T
J
= 125°C
100
mA
2 mA
17 mW
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
96538C (7/99)
© 2000 IXYS All rights reserved
1-2
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