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IXFK90N30 HiPerFET Power MOSFETs
型号:   IXFK90N30
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描述:   HiPerFET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
IXFX 90N30
IXFK 90N30
V
DSS
I
D25
R
DS(on)
= 300 V
=
90 A
=
33 mΩ
t
rr
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D104
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C (MOSFET chip capability)
= 104°C (External lead capability)
= 25°C, pulse width limited by T
JM
= 25°C
Maximum Ratings
300
300
±20
±30
90
75
360
90
64
3
5
560
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
6
10
g
g
PLUS 247
TM
G
(TAB)
D
TO-264 AA (IXFK)
G
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
0.4/6
300
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
300
2.0
V
4.0 V
±100
nA
T
J
= 25°C
T
J
= 125°C
100
µA
2 mA
33 mΩ
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
l
© 2001 IXYS All rights reserved
98537A (12/01)
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