电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
2SK2145Y  2SK2120  2SK2071-01  2SK2166-01  2SK2098-01M  2SK2145GR  2SK2006  2SK209Y  2SK2022-01MR  2SK212C  
IXFK50N50 HiPerFET Power MOSFET
型号:   IXFK50N50
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   HiPerFET Power MOSFET
文件大小 :   123 K    4 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXFK50N50的Datasheet PDF文件第2页 浏览型号IXFK50N50的Datasheet PDF文件第3页 浏览型号IXFK50N50的Datasheet PDF文件第4页  
100%
HiPerFET
TM
Power MOSFET
Single Die MOSFET
Preliminary data sheet
Symbol
Test Conditions
V
DSS
I
D25
55A
50A
55A
50A
R
DS(on)
80mΩ
100mΩ
80mΩ
100mΩ
t
rr
250ns
250ns
250ns
250ns
IXFN
IXFN
IXFK
IXFK
55N50
50N50
55N50
50N50
500V
500V
500V
500V
IXFK
55N50
500
500
±20
±30
55
220
55
60
5
560
Maximum Ratings
IXFK
IXFN
50N50
55N50
500
500
±20
±30
50
200
50
55
220
55
60
5
600
-55 ... +150
150
-55 ... +150
TO-264 AA (IXFK)
IXFN
50N50
V
V
V
V
50 A
200 A
50 A
mJ
V/ns
D
S
G
D
S
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C
T
C
=25°C,
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
W
°C
°C
°C
°C
V~
V~
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
300
N/A
N/A
0.9/6
N/A
10
N/A
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V;
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
Characteristic Values
Min. Typ.
Max.
500
2.5
4.5
±200
T
J
= 25°C
T
J
= 125°C
55N50
50N50
25
2
80
100
V
V
nA
µA
mA
mΩ
mΩ
Features
International standard packages
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
© 2002 IXYS All rights reserved
97502F (04/02)
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7