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MWI75-12E8 IGBT Modules
型号:   MWI75-12E8
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描述:   IGBT Modules
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品牌   IXYS [ IXYS CORPORATION ]
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Advanced Technical Information
MWI 75-12 E8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
I
C25
= 130 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.0 V
1
2
5
6
9
10
19
17
15
3
4
14, 20
7
8
11
12
B3
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 15
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
130
90
I
CM
= 150
V
CEK
V
CES
10
500
V
V
A
A
A
µs
W
Features
• IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 15
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Typical Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.0
2.2
4.5
1.1
400
150
60
680
50
9.0
7.5
5.7
0.75
2.5
6.5
1.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
µC
0.25 K/W
142
• AC drives
• power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 15
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 75 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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