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LSW-1008-R82K-T  LSWM-322522-120M-B  LSW-1008-R62M-B  LSW-1008-R75G-B  LSWM-322522-120M-T  LSW-1008-R91M-B  LSW-1008-R15J-B  LSW-1008-R91G-T  LSW-1008-R68J-B  LSW-1008-R10F-T  
IXFN60N60 HiPerFET Power MOSFETs Single Die MOSFET
型号:   IXFN60N60
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描述:   HiPerFET Power MOSFETs Single Die MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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  浏览型号IXFN60N60的Datasheet PDF文件第2页  
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HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
I
S
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
IXFN 60N60 V
DSS
I
D25
R
DS(on)
D
G
S
= 600 V
= 60 A
= 75 mW
S
Maximum Ratings
600
600
±20
±30
60
240
60
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
miniBLOC, with Aluminium nitride
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
Fast intrinsic Rectifier
Applications
DC-DC converters
rated
Low package inductance
isolation
Low R
DS (on)
HDMOS
TM
process
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2
4.5
±200
T
J
= 25°C
T
J
= 125°C
100
2
75
V
V
nA
mA
mA
mW
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98593B (7/00)
© 2000 IXYS All rights reserved
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