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R1221N45XH-TR  R1221N45XB-TR  AS1119-XXX-M-L-A2-D  XC61AC2101TB  AS11210-XXX-I-A1-D  XC61AC2001TH  AS11212-XXX-I-A1-D  R1221N46AA-TR  AS11210-XXX-M-L-A3-D  XC61AC2002ML  
IXTH24P20 Standard Power MOSFET
型号:   IXTH24P20
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描述:   Standard Power MOSFET
文件大小 :   81 K    2 页
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品牌   IXYS [ IXYS CORPORATION ]
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  浏览型号IXTH24P20的Datasheet PDF文件第2页  
100%
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 24P20
V
DSS
I
D25
R
DS(on)
= 200
= 24
= 0.15
V
A
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
J
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
-200
-200
±20
±30
-24
-96
-24
30
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
W
°
C
°
C
°
C
°
C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
1.13/10 Nm/lb.in.
6
g
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
-200
-3.0
-5.0
±100
T
J
= 25°C
T
J
= 125°C
-25
-1
0.15
V
V
nA
µA
mA
Applications
High side switching
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= -250
µA
V
DS
= V
GS
, I
D
= -250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= -10 V, I
D
= 0.5 I
D25
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
© 2002 IXYS All rights reserved
98769B (2/02)
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