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IXFH26N60Q HiPerFETTM Power MOSFETs Q-Class
型号:   IXFH26N60Q
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描述:   HiPerFETTM Power MOSFETs Q-Class
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品牌   IXYS [ IXYS CORPORATION ]
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HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 26N60Q
IXFT 26N60Q
V
DSS
I
D25
R
DS(on)
= 600 V
=
26 A
= 0.25
t
rr
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
26
104
26
45
1.5
5
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-247
TO-268
300
1.13/10 Nm/lb.in.
6
4
g
g
Features
l
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
4.5
±200
T
J
= 25°C
T
J
= 125°C
25
1
0.25
V
V
nA
µA
mA
l
l
Low gate charge
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2002 IXYS All rights reserved
98635D (6/02)
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