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IXFK48N50 HiPerFET Power MOSFETs
型号:   IXFK48N50
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描述:   HiPerFET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFK / IXFN 44 N50
IXFK / IXFN 48 N50
I
D25
R
DS(on)
500 V 44 A 0.12
500 V 48 A 0.10
t
rr
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C,
pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
44N50
48N50
44N50
48N50
Maximum Ratings
IXFK
IXFN
500
500
±20
±30
44
48
176
192
24
30
5
500
500
500
±20
±30
44
48
176
192
24
30
5
520
150
-55 ... +150
V
V
TO-264 AA
(IXFK)
G
V
V
A
A
A
A
A
mJ
V/ns
S
G
D
(TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
D
G
S
S
D
W
°C
°C
°C
°C
V~
V~
G = Gate
S = Source
D = Drain
TAB = Drain
-55 ... +150
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
300
-
-
0.9/6
-
10
-
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2
4
±200
T
J
= 25°C
T
J
= 125°C
400
2
0.12
0.10
V
V
nA
µA
mA
Features
International standard packages
Molding epoxies meet UL 94 V-0
flammability classification
SOT-227B miniBLOC with aluminium
nitride isolation
Low R
DS (on)
HDMOS
TM
process
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
l
l
l
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
l
l
l
l
l
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
44N50
48N50
Pulse test, t
300
µs,
duty cycle d
2 %
Advantages
Easy to mount
Space savings
High power density
l
l
l
IXYS reserves the right to change limits, test conditions, and dimensions.
93001I (07/00)
C1 - 184
© 2000 IXYS All rights reserved
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