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MCD162-12IO1 Thyristor Modules Thyristor/Diode Modules
型号:   MCD162-12IO1
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描述:   Thyristor Modules Thyristor/Diode Modules
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品牌   IXYS [ IXYS CORPORATION ]
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MCC 162
MCD 162
Thyristor Modules
Thyristor/Diode Modules
I
TRMS
= 2x 300 A
I
TAVM
= 2x 190 A
V
RRM
= 800-1800 V
6 7
5
4
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
1
3
2
Version 1
MCC 162-08io1
MCC 162-12io1
MCC 162-14io1
MCC 162-16io1
MCC 162-18io1
Version 1
MCD 162-08io1
MCD 162-12io1
MCD 162-14io1
MCD 162-16io1
MCD 162-18io1
3
6 7 1
5 4 2
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 80°C; 180° sine
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
300
190
181
6000
6400
5250
5600
180 000
170 000
137 000
128 000
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/ms
MCC
3
1
5 4 2
MCD
òi
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 500 A
f =50 Hz, t
P
=200
ms
V
D
= 2/3 V
DRM
I
G
= 0.5 A
non repetitive, I
T
= 500 A
di
G
/dt = 0.5 A/ms
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
¥;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30
ms
t
P
= 500
ms
500
1000
120
60
8
10
-40...+125
125
-40...+125
A/ms
V/ms
W
W
W
V
°C
°C
°C
V~
V~
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
q
q
q
q
q
q
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
q
q
q
q
q
q
q
q
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
125
g
q
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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