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IXDN55N120D1 High Voltage IGBT with optional Diode
型号:   IXDN55N120D1
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描述:   High Voltage IGBT with optional Diode
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品牌   IXYS [ IXYS CORPORATION ]
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100%
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDN 55N120
V
CES
= 1200 V
= 100 A
IXDN 55N120 D1 I
C25
V
CE(sat) typ
= 2.3 V
C
G
G
C
miniBLOC, SOT-227 B
E153432
G
E
E
IXDN 55N120
E
IXDN 55N120 D1
C
E = Emitter
x,
G = Gate,
C = Collector
E = Emitter
x
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
RBSOA
t
SC
(SCSOA)
P
C
V
ISOL
T
J
T
stg
M
d
Weight
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 kW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 90°C, t
p
= 1 ms
V
GE
= ±15 V, T
J
= 125°C, R
G
= 22
W
Clamped inductive load, L = 30 µH
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C
R
G
= 22
W,
non repetitive
T
C
= 25°C
IGBT
Diode
Maximum Ratings
1200
1200
±20
±30
100
62
124
I
CM
= 100
V
CEK
< V
CES
10
450
220
2500
-40 ... +150
-40 ... +150
V
V
V
V
A
A
A
A
µs
W
W
V~
°C
°C
x
Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
q
q
q
q
q
q
50/60 Hz; I
ISOL
£
1 mA
q
q
q
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
miniBLOC
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Advantages
q
q
q
Space savings
Easy to mount with 2 screws
High power density
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
4.5
T
J
= 25°C
T
J
= 125°C
6
6.5
V
V
Typical Applications
q
q
q
q
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
V
GE
= 0 V
I
C
= 2 mA, V
CE
= V
GE
V
CE
= V
CES
q
3.8 mA
mA
± 500 nA
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0 V, V
GE
= ± 20 V
I
C
= 55 A, V
GE
= 15 V
2.3
2.8
V
032
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1-4
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