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IXFN64N50P PolarHVTM HiPerFETPower MOSFET
型号:   IXFN64N50P
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描述:   PolarHVTM HiPerFETPower MOSFET
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  浏览型号IXFN64N50P的Datasheet PDF文件第2页  
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PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Preliminary Data Sheet
IXFN 64N50P
V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 64 A
85 mΩ
250 ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 4
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
64
150
64
70
2.0
20
700
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
Features
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
D
G = Gate
S = Source
D = Drain
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Mounting torque
50/60 Hz
t = 1 min
I
ISOL
1 mA
t=1s
Mounting torque
Terminal connection torque (M4)
SOT-227B
1.13/10 Nm/lb.in.
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Characteristic Values
Min. Typ.
Max.
500
2.5
5.0
±100
T
J
= 125°C
25
250
85
V
V
nA
µA
µA
m
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
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DS99349(02/05)
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