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IXGN60N60 Ultra-Low VCE(sat) IGBT
型号:   IXGN60N60
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描述:   Ultra-Low VCE(sat) IGBT
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品牌   IXYS [ IXYS CORPORATION ]
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100%
Ultra-Low V
CE(sat)
IGBT
IXGN 60N60
V
CES
= 600 V
I
C25
= 100 A
V
CE(sat)
= 1.7 V
Preliminary data sheet
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
W
Clamped inductive load, L = 30
mH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
100
60
200
I
CM
= 100
@ 0.8 V
CES
250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
SOT-227B miniBLOC
E
x
G
E
x
C
G = Gate, C = Collector, E = Emitter
x
Either emitter terminal can be used
as Main or Kelvin Emitter
Features
q
q
q
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
300
g
°C
q
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
q
q
q
International standard package
SOT-227B
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current, fast switching
IGBT
Low V
CE(sat)
for minimum on-state
conduction losses
MOS Gate turn-on drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
1.7
V
V
mA
mA
nA
V
q
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
q
q
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
q
q
q
Easy to mount with 2 screws
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
97521E (7/00)
© 2000 IXYS All rights reserved
1-2
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