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VMK165-007T Dual Power MOSFET Module
型号:   VMK165-007T
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描述:   Dual Power MOSFET Module
文件大小 :   87 K    2 页
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品牌   IXYS [ IXYS CORPORATION ]
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Advanced Technical Information
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
VMK 165-007T
V
DSS
= 70 V
I
D25
= 165 A
R
DS(on)
= 7 mW
4 5
1
2
3
6 7
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D
I
DM
P
tot
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 6.8 kW
Continuous
Transient
Maximum Ratings
70
70
±20
±30
165
104
660
390
-40 ... +150
150
-40 ... +125
V
V
V
V
A
A
A
W
°C
°C
°C
V~
V~
TO-240 AA
E 72873
1
2
3
6
7
4
5
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C, t
p
= 10 µs, pulse width limited by T
JM
T
C
= 25°C, T
J
= 150°C
1, 3 = Drain,
5, 6 = Gate,
2 = Common Source
4, 7 = Kelvin Source
50/60 Hz
I
ISOL
£
1 mA
t = 1 min
t=1s
3000
3600
Features
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
70
2
4
V
V
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
ceramic
base plate
Isolation voltage 3000 V~
Low R
DS(on)
HDMOS
TM
process
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V DC, V
DS
= 0
V
DS
= V
DSS
,
V
GS
= 0 V, T
J
= 25°C
V
DS
= 0.8 • V
DSS
, V
GS
= 0 V, T
J
= 125°C
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
£
300 µs, duty cycle d
£
2 %
Applications
500 nA
200 µA
1 mA
6
7 mW
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
Data per MOSFET unless otherwise stated.
Advantages
Easy to mount with two screws
Space and weight savings
High power density
Low losses
© 2000 IXYS All rights reserved
1-2
023
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