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IXFT140N10P PolarHV HiPerFET Power MOSFETs
型号:   IXFT140N10P
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描述:   PolarHV HiPerFET Power MOSFETs
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Advance Technical Information
PolarHV
TM
HiPerFET
IXFT 140N10P
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode; Avalanche Rated
IXFH 140N10P
V
DSS
I
D25
R
DS(on)
=
=
=
100 V
140 A
Ω
11 mΩ
TO-247 (IXFT)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
(TO-247)
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
,
T
J
150°C, R
G
= 4
Ω
T
C
= 25°C
600
-55 ... +175
175
-55 ... +150
300
W
°C
°C
°C
°C
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Maximum Ratings
100
100
±20
140
75
300
60
80
2.5
10
V
V
V
A
A
A
A
mJ
J
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
G
S
D (TAB)
G
D
D (TAB)
S
TO-268 (IXFT)
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
1.13/10 Nm/lb.in.
6.0
5.0
g
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 4.0 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 175°C
Characteristic Values
Min. Typ.
Max.
100
3.0
5.0
±100
25
500
11
9
V
V
nA
μA
μA
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
V
GS
= 15 V, I
D
= 300 A
Pulse test, t
300
μs,
duty cycle d
2 %
© 2004 IXYS All rights reserved
DS99213(02/04)
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