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ADS7223  
IXFB38N100Q2 HiPerFET TM Power MOSFETs
型号:   IXFB38N100Q2
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描述:   HiPerFET TM Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
IXFB38N100Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
g
High dV/dt, Low t
rr
V
DSS
= 1000 V
I
D25
=
38 A
R
DS(on)
= 0.25
Ω
t
rr
300 ns
PLUS 264
TM
(IXFB)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
F
c
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting Force
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
T
J
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
1000
1000
±
30
±
40
38
152
38
60
5.0
20
890
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 264
TM
package for clip or spring
mounting
Space savings
High power density
30...120/7.5...27 N/lb
10
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
1000
2.5
V
5.5 V
±
200 nA
T
J
= 25°C
T
J
= 125°C
50
μA
3 mA
0.25
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
=8 mA
V
GS
=
±
30 V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
© 2005 IXYS All rights reserved
DS98949E(09/05)
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