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MIE-184H4 GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
型号:   MIE-184H4
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描述:   GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
文件大小 :   35 K    2 页
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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GaAlAs 1.8mm PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-184H4K is a GaAlAs infrared LED having a
peak wavelength at 850nm. It features ultra-high power,
high response speed and molded package with higher
radiant intensity. In addition to improving the S/N ratio
in applied optical systems, the MIE-184H4K has greatly
improved long-distance characteristics as well as sign-
ificantly increased its range of applicability .
3.00
(.118)
3.30
(.130)
1.40
(.055)
1.60
(.063)
R 1.70
(.067)
φ1.80
(.071)
2.40
(.094)
MIE-184H4
Package Dimensions
Unit : mm (inches )
SEE NOTE 2
Features
l
l
l
l
Ultra-High radiant intensity
High response speed
Special 1.8mm package, radiant angle : 35
o
Peak wavelength
λ
P
=850 nm
2.54 NOM.
(.100)
A
0.50 TYP.
(.020)
25.40MIN.
(1.000)
1.00MIN.
(.040)
SEE NOTE 3
Application
l
l
C
Data communication
SIR
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.4 mm (.015") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
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