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IXTQ100N25P PolarHT Power MOSFET N-Channel Enhancement Mode
型号:   IXTQ100N25P
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描述:   PolarHT Power MOSFET N-Channel Enhancement Mode
文件大小 :   610 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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Advanced Technical Information
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
IXTQ 100N25P
IXTK 100N25P
IXTT 100N25P
V
DSS
= 250 V
I
D25
= 100 A
R
DS(on)
=
27
mΩ
TO-3P (IXTQ)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
TO-268
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 4
T
C
= 25°C
600
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
250
250
±20
100
75
250
60
60
2.0
10
V
V
V
A
A
A
A
mJ
J
V/ns
G
S
G
D
S
D = Drain,
TAB = Drain
(TAB)
G = Gate,
S = Source,
TO-268 (IXTT)
D (TAB)
TO-264(SP) (IXTK)
G
D
S
D (TAB)
D = Drain
TAB = Drain
1.13/10 Nm/lb.in.
5.5
10
5
g
g
g
G = Gate
S = Source
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
250
2.5
5.0
±100
25
250
27
V
V
nA
µA
µA
mΩ
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99118B(07/04)
© 2004 IXYS All rights reserved
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