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IXTH1N100 High Voltage MOSFET
型号:   IXTH1N100
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描述:   High Voltage MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTH 1N100
IXTT 1N100
V
DSS
I
D25
R
DS(on)
= 1000 V
= 1.5 A
= 11
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
Maximum Ratings
1000
1000
±20
±30
1.5
6
1.5
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 18
T
C
= 25°C
6
200
3
60
-55 ... +150
150
-55 ... +150
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque (TO-247)
TO-268
TO-247
1.13/10 Nm/lb.in.
4
6
300
g
g
°C
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Ÿ
International standard packages
Ÿ
High voltage, Low R
DS (on)
HDMOS
TM
process
Ÿ
Rugged polysilicon gate cell structure
Ÿ
Fast
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
500
11
V
V
nA
µA
µA
switching times
Applications
Ÿ
Switch-mode
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 25
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
Ÿ
Ÿ
DC choppers
Ÿ
High frequency
Advantages
and resonant-mode
power supplies
Flyback inverters
matching
V
GS
= 10 V, I
D
= 1.0A
Pulse test, t
300
µs,
duty cycle d
2 %
Ÿ
Space savings
Ÿ
High power density
98886 (1/2)
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