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AM1P-2418S  AM1P-2403S  AM1P-242424D  450XAM1R252A1A1  AM1P-2409S-N  AM1P-240505D  AM1P-121515D  AM1P-1203S  AM1P-121212D  AM1P-0524SH30  
IXTH3N120 High Voltage Power MOSFETs
型号:   IXTH3N120
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描述:   High Voltage Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
IXTH 3N120
V
DSS
I
D25
V
DS(on)
= 1200 V
=
3A
= 4.5
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
3N120
3N110
3N120
3N110
Maximum Ratings
1200
1100
1200
1100
±20
±30
3
12
3
20
700
5
150
-55 to +150
150
-55 to +150
V
V
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Advantages
Easy to mount
Space savings
High power density
Features
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
G = Gate
S = Source
D = Drain
TAB = Drain
G
D
D (TAB)
TO-247
S
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
1200
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
1
4.5
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
© 2003 IXYS All rights reserved
DS99025(03/03)
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