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IXGK60N60C2D1 HiPerFASTTM IGBT with Diode
型号:   IXGK60N60C2D1
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描述:   HiPerFASTTM IGBT with Diode
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品牌   IXYS [ IXYS CORPORATION ]
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Advance Technical Data
HiPerFAST
TM
IGBT with Diode
IXGK 60N60C2D1 V
CES
IXGX 60N60C2D1 I
C25
V
CE(sat)
C2-Class High Speed IGBTs
t
fi(typ)
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Clamped inductive load @ V
CE
600 V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
60
300
I
CM
= 100
480
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
TO-264 AA
(IXGK)
(TAB)
C
E
G
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C = Collector
Tab = Collector
W
°C
°C
°C
Features
Very high frequency IGBT and
anti-parallel FRED in one package
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
RM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Mounting torque, TO-264
TO-264
PLUS247
1.13/10 Nm/lb.in.
10
6
300
g
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
T
J
= 25°C
T
J
= 125°C
5.0
650
5
±100
T
J
= 25°C
T
J
= 125°C
2.1
1.8
2.5
V
µA
mA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
Note 1
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2003 IXYS All rights reserved
DS99044A(09/03)
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