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IXFX21N100Q HiPerFET Power MOSFETs Q-CLASS
型号:   IXFX21N100Q
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描述:   HiPerFET Power MOSFETs Q-CLASS
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品牌   IXYS [ IXYS CORPORATION ]
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HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Qg,
High dV/dt,
Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
IXFK 21N100Q
IXFX 21N100Q
V
DSS
= 1000 V
I
D25
=
21 A
R
DS(on)
= 0.50
t
rr
250 ns
PLUS 247
TM
(IXFX)
Maximum Ratings
1000
1000
±20
±30
21
84
21
60
2.5
10
500
-55 ... +150
150
-55 ... +150
300
0.4/6
6
10
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
g
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power
supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ.
max.
1000
3
5.5
±100
100
2
0.50
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
T
J
= 125°C
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
© 2002 IXYS All rights reserved
DS98677D(10/03)
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