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IXTA8N50P PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
型号:   IXTA8N50P
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描述:   PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
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品牌   IXYS [ IXYS CORPORATION ]
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100%
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 8N50P
IXTP 8N50P
V
DSS
I
D25
R
DS(on)
= 500
=
8
0.8
V
A
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150° C, R
G
= 18
T
C
= 25° C
Maximum Ratings
500
500
±30
±40
8
14
8
20
400
10
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
°C
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
(TO-220)
300
260
1.13/10 Nm/lb.in.
4
3
g
g
Features
l
l
l
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 100µA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.5
±100
5
50
0.8
V
V
nA
µA
µA
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2006 IXYS All rights reserved
DS99321E(03/06)
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