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HE1AN-Q-AC100V  GRM0335C1H3R9CD01D  GRM0335C1H4R7CD01D  GRM0335C1E1R2CD01D  GRM0337U1H120JD01D  HE1AN-S-DC24V  HE1AN-P-DC48V  HE1AN-P-DC12V  GRM0335C1HR20BD01D  GRM0337U1H8R0DD01D  
MID-95A3LH SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR
型号:   MID-95A3LH
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描述:   SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR
文件大小 :   34 K    2 页
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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SIDE LOOK PACKAGE
NPN PHOTOTRANSISTOR
Description
mounted in a special dark plastic side looking package
and suitable for the IRED (940nm) Type.
A
6.80
(.270)
4.50
(.180)
5.00
(.200)
4.90
(.193)
MID-95A3LH
Package Dimensions
1.50
(.059)
The MID-95A3LH is a TWIN NPN silicon phototransistor
Unit: mm ( inches
RADIANT SENSITIVE
AREA
3.05
(.112)
2.49
(.098)
B
1.00
(.040)
13.00MIN
(.511)
.50 TYP.
(.020)
0.61 ± .01
(.020)
Features
l
l
3
Wide range of collector current
Low cost plastic package
1.00MIN.
(.040)
1
2
2.54
(.100)
2.54
(.100)
3.00MIN
.
1.27 ± .01
(.050)
0.61
(.020)
1
2
1
2
3
3
EMITTER (PTR A)
COLLECTOR(COM)
EMITTER (PTR B)
NOTES :
1. All dimensions are in millimeters.(inches).
2. Tolerance is ± 0.25mm (.010") unless otherwise noted .
3. Protruded resin under flange is 1.5mm (.059") max.
4. Specifications are subject to change without notice.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
V
V
o
Unity Opto Technology Co., Ltd.
02/04/2002
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