电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
E3F2-D1C4-M1-M  CTFCS200-24  E3F2-7B4-M  CTB04VY6  DRS3110  CTFCS200-9  CTFCS100-12  CTB04VY9  E3F2-DS30B41-M1-M  CTB04VY7  
DSEE30-12A HiPerFRED Epitaxial Diode
型号:   DSEE30-12A
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   HiPerFRED Epitaxial Diode
文件大小 :   92 K    2 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号DSEE30-12A的Datasheet PDF文件第2页  
100%
ADVANCE TECHNICAL INFORMATION
DSEE30-12A
HiPerFRED
TM
Epitaxial Diode
I
FAV
= 30 A
V
RRM
= 1200 V
t
rr
= 30 ns
V
RRM
V
1200
V
RRM
V
600
Type
TO-247 AD
DSEE30-12A
1
2
3
1
2
3
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
M
d
Weight
Conditions
T
C
= 90°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 µH
V
A
= 1.5· V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
60
30
200
0.2
0.1
-55...+175
175
-55...+150
A
A
A
mJ
Features
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
A
°C
°C
°C
°C
W
Nm/ lb.in.
g
1.6 mm (0.063 in) from case for 10 s
T
C
= 25°C
Mounting Torque
typical
260
165
0.9/6
2
Applications
Symbol
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
200
2
1.75
2.5
0.9
0.25
µA
mA
V
V
K/W
K/W
ns
A
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
30
4
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Notes
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
µs,
Duty Cycle < 2.0 %
Please see DSEP 30-06A Data Sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
DS98962 (10/02)
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7