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DSEP30-06B HiPerFRED Epitaxial Diode with soft recovery
型号:   DSEP30-06B
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描述:   HiPerFRED Epitaxial Diode with soft recovery
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品牌   IXYS [ IXYS CORPORATION ]
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DSEP 30-06A
DSEP 30-06BR DSEP 30-06B
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 30 A
V
RRM
= 600 V
t
rr
= 30/35 ns
A
C
V
RSM
V
600
600
600
V
RRM
V
600
600
600
Type
TO-247 AD
Version A
ISOPLUS 247
TM
Version BR
DSEP 30-06A
DSEP 30-06B
DSEP 30-06BR
C
A
C (TAB)
C
A
Isolated
back surface
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
*
F
C
V
ISOL
**
Weight
Conditions
rect., d = 0.5; T
C
(Vers. A) = 135°C
T
C
(Vers. B) = 125°C; T
C
(Vers. BR) = 115°C
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
250
0.2
0.1
-55...+175
175
-55...+150
A
A
A
mJ
A
°C
°C
°C
W
W
Nm
N
V~
g
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Version ..R isolated and
UL registered E153432
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
T
C
= 25°C
(Vers. BR)
mounting torque
mounting force with clip
50/60 Hz, RMS, t = 1 minute, leads-to-tab
typical
165
135
0.8...1.2
20...120
2500
6
* Verson A only; ** Version BR only
Symbol
I
R
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic max. Values
Vers. A Vers. B
250
1
1.25
1.60
0.9
250
2
1.56
2.51
0.9
1.1
0.25
30
4
µA
mA
V
V
K/W
K/W
K/W
ns
V
F
R
thJC
R
thJC
R
thCH
t
rr
I
RM
typ.
typ.
Version BR
typ.
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
0.25
35
6
Dimensions see Outlines.pdf
A
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
417
© 2004 IXYS All rights reserved
1-3
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