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IXGH28N120B High Voltage IGBT
型号:   IXGH28N120B
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描述:   High Voltage IGBT
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品牌   IXYS [ IXYS CORPORATION ]
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100%
High Voltage IGBT
IXGH 28N120B V
CES
= 1200 V
=
50 A
IXGT 28N120B I
C25
V
CE(sat)
= 3.5 V
t
fi(typ)
=
160 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
50
28
150
I
CM
= 120
@ 0.8 V
CES
250
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
A
TO-268 (IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C (TAB)
C
E
W
°C
°C
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
T
J
= 25°C
5
25
±100
T
J
= 125°C
2.8
2.75
3.5
V
V
µA
nA
V
V
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Low switching losses, low V
(sat)
MOS Gate turn-on
- drive simplicity
Advantages
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA
, V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 28A, V
GE
= 15 V
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserved
DS98987E(04/04)
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