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IXGH32N170 High Voltage IGBT
型号:   IXGH32N170
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描述:   High Voltage IGBT
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品牌   IXYS [ IXYS CORPORATION ]
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100%
High Voltage
IGBT
Preliminary Data Sheet
IXGH 32N170 V
CES
IXGT 32N170 I
C25
V
CE(sat)
t
fi(typ)
= 1700 V
=
75 A
= 3.3 V
= 250 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1700
1700
±20
±30
75
32
200
I
CM
= 90
@ 0.8 V
CES
350
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
A
TO-268 (IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C (TAB)
C
E
C = Collector,
TAB = Collector
W
°C
°C
°C
°C
°C
G = Gate,
E = Emitter,
Features
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1700
3.0
T
J
= 25°C
T
J
= 125°C
5.0
50
1
±100
T
J
= 25°C
T
J
= 125°C
2.5
3.0
3.3
V
V
µA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 2003 IXYS All rights reserved
DS98941B(11/03)
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