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MEO450-12DA Fast Recovery Epitaxial Diode (FRED) Module
型号:   MEO450-12DA
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描述:   Fast Recovery Epitaxial Diode (FRED) Module
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品牌   IXYS [ IXYS CORPORATION ]
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  浏览型号MEO450-12DA的Datasheet PDF文件第2页  
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Fast Recovery
Epitaxial Diode
(FRED) Module
Preliminary data
V
RSM
V
1200
V
RRM
V
1200
MEO 450-12DA
Type
MEO 450-12 DA
V
RRM
= 1200 V
I
FAVM
= 453 A
t
rr
= 450 ns
3
1
3
1
Symbol
I
FRMS
I
FAVM
ÿÿ
x
I
FRM
I
FSM
Test Conditions
T
C
= 75
°C
T
C
= 75
°C;
rectangular, d = 0.5
t
P
< 10
ms;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
640
453
2460
4800
5280
4320
4750
115200
117100
93300
94800
-40...+150
-40...+125
110
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
V~
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
q
q
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 300 A;
I
F
= 520 A;
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
T
VJ
T
VJ
T
VJ
= 125°C
= 25°C
= 125°C
= 25°C
T
C
= 25°C
50/60 Hz, RMS t = 1 min
I
ISOL
£
1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
1750
3000
3600
Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
q
q
q
q
q
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
12.7
9.6
50
150
mm
mm
m/s
2
g
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
q
q
q
q
Characteristic Values (per diode)
typ.
max.
24
6
120
1.51
1.78
1.76
1.96
1.16
1.15
0.114
0.071
T
VJ
= 100°C
T
VJ
= 25°C
T
VJ
= 100°C
450
500
110
165
mA
mA
mA
V
V
V
V
V
mW
K/W
K/W
ns
A
A
Dimensions in mm (1 mm = 0.0394")
V
F
For power-loss calculations only
DC current
DC current
600 A
I
F
=
600 V
V
R
=
-di/dt = 800 A/ms
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
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