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MIE-304G1 GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
型号:   MIE-304G1
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描述:   GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
文件大小 :   34 K    2 页
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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GaAs HIGH POWER T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-304G1 is an infrared emitting diode in GaAs
technology molded in water clear plastic package.
ψ3.00
(.118)
MIE-304G1
Unit : mm (inches )
Package Dimensions
5.25
(.207)
1.00
(.040)
4.00
(.157)
0.80 ±0.50
(.031±.020)
FLAT DENOTES CATHODE
Features
l
l
l
23.40MIN.
(.920)
Standard T-1 (
φ
3mm ) package, radiation angle : ±10°
Peak wavelength
λp
= 940 nm
Good spectral matching to si-photodetector
0.50 TYP.
(.020)
1.00MIN.
(.040)
2.54
(.100)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
o
Unity Opto Technology Co., Ltd.
02/04/2002
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