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MIE-324A4 AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
型号:   MIE-324A4
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描述:   AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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AlGaAs/GaAs HIGH POWER T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-324A4 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
φ
3.55±0.25
(.140±.010)
φ
3.10±0.20
(.122±.008)
MIE-324A4
Unit : mm (inches )
Package Dimensions
4.28±0.20
(.169±.008)
5.28±0.30
(.208±.012)
SEE NOTE 2
3.85
(.152)
Features
l
l
l
l
l
23.40MIN.
(.920)
CATHODE
High radiant power and high radiant intensity
Suitable ror DC and high pulse current operation
Standard T-1 (
φ
3mm) package, radiation angle: 40°
Peak wavelength
λp
= 940 nm
Good spectral matching to si-photodetector
A
0.50 TYP.
(.020)
1.00MIN.
(.039)
2.54NOM.
(.100)
SEE NOTE 3
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
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