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RA18H1213G  RA18H1213G-101  RA18H1213G_10  
BL-S45L8 GaAsP/GaP hi-eff red Low power consumption.
型号:   BL-S45L8
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描述:   GaAsP/GaP hi-eff red Low power consumption.
文件大小 :   125 K    2 页
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品牌   BRIGHT [ BRIGHT LED ELECTRONICS CORP ]
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BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BL-S45L8
Features:
1. Chip material: GaAsP/GaP
2. Emitted color : hi-eff red
3. Lens Appearance : red diffused
4. General purpose leads.
5. Low power consumption.
6. Compatible/ low current requirements
7. Reliable and rugged.
8. This product don’t contained restriction
substance, compliance ROHS standard.
Package dimensions:
3.3(.130)
1.6(.063)
1.8(.071)
3.0(.118)
1.5(.059)
MAX.
25.4(.100) MIN.
0.5(.02) SQ.
TYP.
Cathode
3.3(.130)
1.7R(.067)
2.4(.094)
2.54(.100)
NOM.
1.0(.039)
MIN.
Applications:
1. TV set
2. Monitor
3. Telephone
4. Computer
5. Circuit board
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3. Lead spacing is measured where the leads emerge from
the package.
4. Specifications are subject to change without notice.
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Forward Current
Peak Forward Current*
1
Reverse
Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
Pd
I
F
I
FP
V
R
Topr
Tstg
Tsol
Rating
80
30
150
5
-40
~80
-40
~85
260
(for 5 seconds)
Unit
mW
mA
mA
V
*
1
Condition for I
FP
is pulse of 1/10 duty and 0.1msec width.
Ver.2.0 Page: 1 of 2
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