电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
06203415  06203529  06203414  06203421  06203403  06203501  06203426  06203307  06203416  06203328  
IXFT12N100Q HiPerFETTM Power MOSFETs Q Class
型号:   IXFT12N100Q
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   HiPerFETTM Power MOSFETs Q Class
文件大小 :   146 K    4 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXFT12N100Q的Datasheet PDF文件第2页 浏览型号IXFT12N100Q的Datasheet PDF文件第3页 浏览型号IXFT12N100Q的Datasheet PDF文件第4页  
100%
HiPerFET
TM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
, High dv/dt
V
DSS
IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
I
D25
R
DS(on)
1000 V 12 A 1.05
1000 V 10 A 1.20
t
rr
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C,
pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
12N100Q
10N100Q
12N100Q
10N100Q
12N100Q
10N100Q
Maximum Ratings
1000
1000
±20
±30
12
10
48
40
12
10
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
1000
2.5
5.5
±100
T
J
= 25°C
T
J
= 125°C
50
1
1.05
1.20
V
V
nA
µA
mA
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
97539D(12/02)
Test Conditions
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
12N100Q
10N100Q
Pulse test, t
300
µs,
duty cycle d
2 %
© 2002 IXYS All rights reserved
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7