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IXFP3N120 HiPerFET Power MOSFETs
型号:   IXFP3N120
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描述:   HiPerFET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
Preliminary Data Sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 4.7
T
C
= 25°C
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
IXFA 3N120
IXFP 3N120
V
DSS
=1200 V
=
3A
I
D25
R
DS(on)
= 4.5
t
rr
300 ns
Maximum Ratings
1200
1200
±20
±30
3
12
3
20
700
10
200
-55 to +150
150
-55 to +150
300
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
TO-220 (IXFP)
D (TAB)
G
DS
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
TO-263 (IXFA)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
1.13/10 Nm/lb.in.
4
2
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
1200
2.5
5.0
±100
T
J
= 25°C
T
J
= 125°C
50
2
4.5
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1.5 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2004 IXYS All rights reserved
DS99036B(07/04)
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