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CGJ5F3X7R0F102J  CGJ5F4C0G0F106J  CGJ5F3C0G1E105J  CGJ5F3C0G1A101J  CGJ5F3C0G1A102J  CGJ5F2C0G1A102J  CGJ5F4C0G0F101J  CGJ5F2C0G1C102J  CGJ5F2C0G0F105J  CGJ5F2X7R1H101J  
IXFH18N60P PolarHV HiPerFET Power MOSFET
型号:   IXFH18N60P
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描述:   PolarHV HiPerFET Power MOSFET
文件大小 :   171 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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100%
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
V
DSS
I
D25
R
DS(on)
t
rr
=
=
600 V
18
A
400 mΩ
Ω
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Tranisent
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
,
T
J
150°C, R
G
= 5
Ω
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
18
45
18
30
1.0
10
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
TO-247 AD (IXFH)
D (TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
(TO-247)
300
260
1.13/10 Nm/lb.in.
6
4
g
g
G = Gate
S = Source
G
S
D (TAB)
TO-247
PLUS220 & PLUS220SMD
D = Drain
TAB = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
±100
25
250
400
V
V
Features
l
l
l
nA
μA
μA
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
μs,
duty cycle d
2 %
Easy to mount
Space savings
High power density
DS99390E(03/06)
© 2006 IXYS All rights reserved
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