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JANTXV1N4959C  JANTXV1N4954DUS  JANTXV1N4627URTR-1  JANTXV1N4625URTR  JANTXV1N4961DUS  JANTXV1N4954  JANTXV1N4958D  JANTXV1N4966C  JANTXV1N4955DUS  JANTXV1N4960C  
IXFH26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
型号:   IXFH26N60P
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描述:   N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
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Advance Technical Information
Advance Technical Information
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 26N60P
IXFQ 26N60P
IXFT 26N60P
IXFV 26N60P
IXFV 26N60PS
V
DSS
I
D25
=
=
R
DS(on)
t
rr
TO-247 (IXFH)
600
V
26
A
270 mΩ
200 ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 5
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
26
65
26
40
1.2
10
V
V
V
V
A
A
A
mJ
J
V/ns
G
D
G
D
TO-3P (IXFQ)
S
S
D (TAB)
TO-268 (IXFT)
G
S
D (TAB)
PLUS220 (IXFV)
460
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
°C
G
D
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-3P
TO-248
TO-268
PLUS220 & PLUS220SMD
300
250
PLUS220SMD (IXFV_S)
1.13/10 Nm/lb.in.
11..65/2.5..15
5.5
6.0
5.0
4.0
N/lb
g
g
g
g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
2.5
5.0
±100
25
250
270
V
V
nA
µA
µA
m
Features
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
DS99435(08/05)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
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