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IXGH50N60B2 HiPerFASTTM IGBT B2-Class High Speed IGBTs
型号:   IXGH50N60B2
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描述:   HiPerFASTTM IGBT B2-Class High Speed IGBTs
文件大小 :   586 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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HiPerFAST
TM
IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2
IXGT 50N60B2
V
CES
I
C25
V
CE(sat)
t
fi
typ
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Clamped inductive load @
600V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
50
200
I
CM
= 80
400
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-247
(IXGH)
C (TAB)
G
C
E
TO-268
(IXGT)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (TO-247)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
3.0
T
J
= 25°C
T
J
= 150°C
5.0
50
1
±100
T
J
= 125°C
1.6
1.5
2.0
V
µA
mA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 40 A, V
GE
= 15 V
© 2004 IXYS All rights reserved
DS99145A(03/04)
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