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MR18R1624AF0-CM8  F03B125V15A  F03A250V2A  MR18R162GAF0-CT9  MR16R1628AF0-CK8  M29F040  LHF80V11  F03A125V25A  MR18R162GAF0-CK8  F03A250V8A  
BL-R4532L GaAsP/GaP Hi-Eff Red Low power consumption.
型号:   BL-R4532L
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描述:   GaAsP/GaP Hi-Eff Red Low power consumption.
文件大小 :   128 K    2 页
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品牌   BRIGHT [ BRIGHT LED ELECTRONICS CORP ]
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  浏览型号BL-R4532L的Datasheet PDF文件第2页  
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BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BL-R4532L-AT
Features:
1. Chip material: GaAsP/GaP
2. Emitted color : Hi-Eff Red
3. Lens Appearance : Red Diffused
4. Low power consumption.
5. Most suitable for use like level indicator.
6. Excellent uniformity of light emittance.
7. Long life solid state reliability.
8. Compatible.
9. This product don’t contained restriction
substance, compliance ROHS standard.
Package dimensions:
4.7(.185)
2.4(.094)
3.7(.146)
0.9(.035)
1.5(.059)
MAX.
25.4(1.00) MIN.
Cathode
2.5(.098)
0.5(.020) SQ.TYP.
4.8(.189)
2.8(.110)
2.54(.100)
NOM.
1.0(.039)
MIN.
Applications:
1. TV set
2. Monitor
3. Telephone
4. Computer
5. Circuit board
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3. Lead spacing is measured where the leads emerge from
the package.
4. Specifications are subject to change without notice.
Absolute maximum ratings(Ta=25℃)
Parameter
Power Dissipation
Forward Current
Peak Forward Current*
1
Reverse
Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
Pd
I
F
I
FP
V
R
Topr
Tstg
Tsol
Rating
80
30
150
5
-40
~80
-40
~85
260
(for 5 seconds)
Unit
mW
mA
mA
V
*
1
Condition for I
FP
is pulse of 1/10 duty and 0.1msec width.
Ver.1.0 Page 1 of 2
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