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IXFH14N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
型号:   IXFH14N100Q2
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描述:   N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
文件大小 :   565 K    4 页
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品牌   IXYS [ IXYS CORPORATION ]
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Advanced Technical Data
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
Low R
g
, High dv/dt, Low t
rr
IXFH14N100Q2
V
DSS
=
=
I
D25
R
DS(on)
=
t
rr
300 ns
1000 V
14 A
0.90
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
Maximum Ratings
1000
1000
±30
±40
14
56
14
50
2.5
20
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
(TAB)
G = Gate
S = Source
TAB = Drain
Features
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R
DS (on)
,
low Q
g
Avalanche energy and current rated
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Easy to mount
Space savings
High power density
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
3.0
5.0
±200
T
J
= 25°C
T
J
= 125°C
25
1
0.90
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2003 IXYS All rights reserved
DS99073(08/03)
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