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MIE-516L3U GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
型号:   MIE-516L3U
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描述:   GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
文件大小 :   35 K    2 页
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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GaAlAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-516L3U is infrared emitting diodes in
GaAlAs technology molded in pastel blue
transparent package.
φ5.05
(.200)
MIE-516L3U
Unit: mm (inches)
Package Dimensions
5.47
(.215)
7.62
(.300)
Features
l
5.90
(.230)
1.0
(.040)
SEE NOTE 2
Suitable for DC and high pulse current operation
Standard T-1 3/4 (φ 5mm) package
Peak wavelength
λ
p
= 880 nm
Good spectral matching to si-photodetector
Radiant angle : 16°
l
FLAT DENOTES CATHODE
l
l
0.50 TYP.
(.020)
23.40 MIN.
(.920)
l
1.00MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
o
260 C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/17/2000
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