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FYS-10012FXX-4  FYS-10012EXX-4  FYS-10012FXX-3  FYS-10012DXX  FYS-10012DXX-3  NCS2535DTR2G  FYS-10012DXX-4  FYS-10012EXX-3  FYS-10012DX-4  FYS-10012FXX-2  
MIE-824A4 AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
型号:   MIE-824A4
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描述:   AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-824A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coation chip technology.
It is molded in water clear plastic package.
φ5.00
(.197)
MIE-824A4
Package Dimensions
Unit: inches
4.30
(.169)
5.80
(.228)
SEE NOTE 2
1.00
(.039)
FLAT DENOTES CATHODE
Features
l
l
l
l
0.50 TYP.
(.020)
23.40 MIN.
(.921)
High radiant power and high radiant intesity
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
Radiant angle: 120°
2.54 NOM.
(.100)
SEE NOTE 3
1.00MIN.
(.039)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
o
Unity Opto Technology Co., Ltd.
02/04/2002
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