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IXGH24N60AU1 HiPerFAST IGBT with Diode
型号:   IXGH24N60AU1
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描述:   HiPerFAST IGBT with Diode
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFAST
TM
IGBT with Diode
Combi Pack
IXGH 24N60AU1 V
CES
IXGH 24N60AU1S I
C25
V
CE(sat)
t
fi
= 600 V
=
48 A
= 2.7 V
= 275 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
48
24
96
I
CM
= 48
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
l
TO-247 SMD
(24N60AU1S)
G
E
C (TAB)
TO-247 AD
(24N60AU1)
C (TAB)
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
TO-247 SMD
TO-247 AD
1.13/10 Nm/lb.in.
4
6
g
g
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
l
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.5
500
8
±100
2.7
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
l
l
l
l
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
l
l
l
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
Reduces assembly time and cost
92717H (3/97)
©1997 IXYS Corporation. All rights reserved.
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