电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
B41888C3109M001  B41888C4828M002  B41888C3688M002  B41888C3568M001  B41888C3108M001  B41888C3477M002  B41886A5107M00  B41851A4478M000  B41888C5398M001  B41888C3398M001  
IXFM40N30 HiPerFET Power MOSFETs
型号:   IXFM40N30
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   HiPerFET Power MOSFETs
文件大小 :   170 K    4 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXFM40N30的Datasheet PDF文件第2页 浏览型号IXFM40N30的Datasheet PDF文件第3页 浏览型号IXFM40N30的Datasheet PDF文件第4页  
100%
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 35 N30
IXFH 40 N30
IXFM 40 N30
300 V
300 V
300 V
I
D25
R
DS(on)
35 A 100 mW
40 A 85 mW
40 A 88 mW
t
rr
£
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
35N30
40N30
35N30
40N30
35N30
40N30
Maximum Ratings
300
300
±20
±30
35
40
140
160
35
40
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
300
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
0.100
0.085
0.088
V
V
nA
mA
mA
W
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
91523F (07/00)
35N30
FH40N30
FM40N30
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7