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SR26 FAST RECOVERY SILICON SURFACE MOUNT
型号:   SR26
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描述:   FAST RECOVERY SILICON SURFACE MOUNT
文件大小 :   50 K    2 页
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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  浏览型号SR26的Datasheet PDF文件第2页  
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SR26 - SR29
PRV : 100 - 800 Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
FAST RECOVERY
SILICON SURFACE MOUNT
SMC (DO-214AB)
1 .1
±
0.3
±
0.15
±
0.15
8.0
3.0
±
0.2
0.2
±
0.0 7
5.8
±
0.15
7.5
2.3
±
0.2
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMC Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.21 gram
Dimensions in millime ter
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Ta = 50
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
SR26
100
70
100
SR27
200
140
200
2.0
SR28
400
280
400
SR29
800
560
800
UNIT
V
V
V
A
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 2.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
T
J
T
STG
70
1.3
10
500
250
28
- 50 to + 125
- 50 to + 150
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : April 2, 2002
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