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IXFT32N50 HiPerFET Power MOSFETs
型号:   IXFT32N50
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描述:   HiPerFET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFT 30N50
IXFH/IXFT 32N50
500 V
500 V
I
D25
30 A
32 A
R
DS(on)
0.16
W
0.15
W
t
rr
£
250 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AS
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C
pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
D
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
±30
30N50
32N50
30N50
32N50
30N50
32N50
Maximum Ratings
500
500
±20
V
30
32
120
128
30
32
1.5
45
5
360
-55 ... +150
150
-55 ... +150
V
V
V
D (TAB)
A
A
A
A
A
A
J
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
TO-268 (D3) Case Style
G
S
G = Gate,
S = Source,
(TAB)
D = Drain,
TAB = Drain
Features
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
6
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ.
max.
500
0.102
2
-0.206
±100
T
J
= 25°C
T
J
= 125°C
200
1
0.15
0.16
4
V
%/K
V
%/K
nA
mA
mA
W
W
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Diode
Applications
V
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 4 mA
V
GS(th)
temperature coefficient
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 15A
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
V
GS(th)
I
GSS
I
DSS
R
DS(on)
32N50
30N50
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
97518H (6/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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