电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
IXKN75N60C CoolMOS Power MOSFET
型号:   IXKN75N60C
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   CoolMOS Power MOSFET
文件大小 :   72 K    3 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXKN75N60C的Datasheet PDF文件第2页 浏览型号IXKN75N60C的Datasheet PDF文件第3页  
100%
CoolMOS Power MOSFET
IXKN 75N60C
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
V
DSS
600 V
I
D25
75 A
R
DS(on)
35 mΩ
Preliminary
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
dv/dt
E
AS
E
AR
T
C
= 25°C
T
C
= 90°C
V
DS
< V
DSS
; I
F
100A;di
F
/dt≤ 200A/µs
T
VJ
= 150°C
I
D
= 10 A; L = 36 mH; T
C
= 25°C
I
D
= 20 A; L = 5 µH; T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
miniBLOC, SOT-227 B
E72873
S
600
±20
75
50
6
1.8
1
V
V
A
A
V/ns
G
S
D
G = Gate
S = Source
D = Drain
J
mJ
Either source terminal at miniBLOC can be used
as main or kelvin source
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
30
3.5
0.1
35 mΩ
5.5
V
Features
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 5 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 100 A
0.05 mA
mA
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
200 nA
440
112
246
30
95
100
10
0.9
1.1
nC
nC
nC
ns
ns
ns
ns
V
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 50 A; R
G
= 1
(reverse conduction) I
F
= 37.5 A; V
GS
= 0 V
Applications
0.22 K/W
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1-3
130
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7