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GAL22V10-25LVI  GAL22V10-20LVM  GAL22V10-25LVC  GAL22V10-25  GAL22V10-30LVC  GAL22V10-25LVM  GAL22V10-25LNI  GAL22V10-25LNC  GAL22V10-30  GAL22V10-20LVI  
IXFN73N30 HiPerFET Power MOSFETs
型号:   IXFN73N30
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描述:   HiPerFET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFK 73 N 30
IXFN 73 N 30
I
D25
R
DS(on)
45 mΩ
45 mΩ
300 V
73 A
300 V
73 A
t
rr
200 ns
TO-264 AA (IXFK)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
300
-
-
0.9/6
-
10
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2 W
T
C
= 25°C
Maximum Ratings
IXFK
IXFN
300
300
±20
±30
73
292
40
30
5
500
300
300
±20
±30
73
292
40
30
5
520
150
-55 ... +150
-
2500
3000
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
V~
V~
G = Gate
S = Source
S
D
G
D
(TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
-55 ... +150
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
l
International standard packages
l
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
l
miniBLOC with Aluminium nitride
isolation
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Synchronous rectification
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
Temperature and lighting controls
l
Low voltage relays
Advantages
l
Easy to mount
l
Space savings
l
High power density
92805J (11/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
300
2
4
±200
T
J
= 25°C
T
J
= 125°C
400
2
45
V
V
nA
uA
mA
mΩ
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
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