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IXFN36N60 HiPerFET Power MOSFET
型号:   IXFN36N60
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描述:   HiPerFET Power MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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100%
IXFK 32N60
IXFK 36N60
Preliminary Data
IXFN 32N60
IXFN 36N60
I
D25
R
DS(on)
0.18Ω
0.25Ω
t
rr
250ns
250ns
V
DSS
HiPerFET Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
TM
IXFK/FN 36N60 600V 36A
IXFK/FN 32N60 600V 32A
TO-264 AA (IXFK)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMSt = 1 min
I
ISOL
1 mAt = 1 s
Mounting torque
Terminal connection torque
-55 ...
300
-
-
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
Maximum Ratings
IXFK IXFN
600
600
±20
±30
32N60 32
36N60 36
32N60 128
36N60 144
20
30
5
500
-55 ...
600
600
±20
±30
32
36
128
144
20
30
5
520
+150
150
+150
-
2500
3000
V
V
V
V
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Features
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
HDMOS
TM
process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
92807G (01/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
G = Gate
S = Source
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
D = Drain
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
0.9/6 1.5/13
- 1.5/13
10
30
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
600
2
4.5
±200
T
J
= 25°C
T
J
= 125°C
400
2
0.18
0.25
V
V
nA
µA
mA
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
36N60
Pulse test, t
300
µs,
duty cycle
2 % 32N60
©1996 IXYS Corporation. All rights reserved.
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
Fax: 408-496-0670
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