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BAS70 SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL
型号:   BAS70
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描述:   SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL
文件大小 :   120 K    1 页
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
购买 :   
   
100%
TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
BAS70/-04/-05/-06
PRV : 70 Volts
Io : 200 mA
FEATURES :
* These diodes feature very low turn-on voltage
* Fast switching
* These devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges
* Pb / RoHS Free
SMALL SIGNAL SCHOTTKY
DIODE, SINGLE & DUAL
SOT-23
1.40
0.95
0.50
0.35
0.19
0.08
1
3.10
2.70
1.65
1.20
3.0
2.2
1.02
0.89
3
2
0.100
0.013
2.04
1.78
Dimensions in millimeters
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* BAS70
Marking Code : 73
* BAS70-04 Marking Code : 74
* BAS70-05 Marking Code : 75
* BAS70-06 Marking Code : 76
BAS70
3
BAS70-04
3
BAS70-05
3
BAS70-06
3
1
2
1
2
1
2
1
2
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
( Ta = 25 °C, unless otherwise specified)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Forward Continuous Current
Maximum Peak Forward Surge Current at tp < 1 s
Total Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
P
tot
R
ӨJA
T
J
T
STG
(Ta = 25 °C, unless otherwise specified.
Value
70
70
70
200
(1)
600
200
(1)
(1)
(1)
Unit
V
V
V
mA
mA
mW
K/W
°C
°C
430
125
-65 to +150
ELECTRICAL CHARACTERISTICS
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage
(Note 2)
Diode Capacitance
Reverse Recovery Time
Test Condition
I
R
= 10 µA (pulses)
V
R
= 50 V
I
F
= 1.0 mA
I
F
= 15 mA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA , I
R
= 10 mA,
Irr = 1A , R
L
= 100
Symbol
V
(BR)
I
R
V
F
V
F
C
tot
Trr
Min.
70
-
-
-
-
-
Typ.
-
20
-
-
1.5
-
Max.
-
100
410
1
2
5
Unit
V
nA
mV
V
pF
ns
Notes :
(1) Device on fiberglass substrate
(2) Pulse test tp < 300 µs
Page 1 of 1
Rev. 01 : May 23, 2006
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