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MIE-514H4 GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
型号:   MIE-514H4
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描述:   GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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品牌   UOT [ UNITY OPTO TECHNOLOGY ]
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GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-514H4 is a GaAlAs infrared LED having
a peak wavelength at 850 nm . It feature ultra-high
power, high response speed and molded in water
clear plastic package, the MIE-514H4 have greatly
improved long-distance characteristics as well as
as significantly increased its range of applicability.
1.00
(.040)
SEE NOTE 2
7.62
(.300)
φ5.05
(.200)
MIE-514H4
Unit: mm (inches)
Package Dimensions
5.47
(.215)
5.90
(.230)
Features
l
FLAT DENOTES CATHODE
Ultra-High radiant incidence
High response speed
High modulation bandwidth
Standard T-1 3/4 (
φ
5mm ) package
Radiation angle : 15°
Peak wavelength
λ
p
= 850 nm
A
1.00MIN.
(.040)
2.54NOM.
(.100)
SEE NOTE 3
0.50 TYP.
(.020)
23.40 MIN
(.920)
l
l
l
l
l
C
Applications
l
Free air transmission systems with high -speed
response
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
l
SIR
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
o
o
-55 C to +100 C
Unit
mW
A
mA
V
-55
o
C to +100
o
C
260 C for 5 seconds
o
Unity Opto Technology Co., Ltd.
11/17/2000
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