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GB162BNGBBMDA-V01  GB162BHYABMUA-V01  GB162BHYBANLA-V01  GB162BNGBBMUB-V01  GB162BNGABMDA-V01  GB162BHYBBNDA-V01  GB162BHYBBMDB-V01  GB162BNGABMLB-V01  GB162BNGAAMUA-V01  GB162BHYABMLA-V01  
BZX55C8V2 SILICON ZENER DIODES
型号:   BZX55C8V2
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描述:   SILICON ZENER DIODES
文件大小 :   31 K    2 页
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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BZX55C2V4 ~ BZX55C200
V
Z
: 2.4 - 200 Volts
P
D
: 500 mW
SILICON ZENER DIODES
DO - 35
1.00 (25.4)
min.
0.079(2.0 )max.
FEATURES :
*
*
*
*
*
Complete 2.4 to 200 Volts
High surge current capability
High peak reverse power dissipation
High reliability
Low leakage current
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MECHANICAL DATA
* Case : Molded glass
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
Power Dissipation (Note)
Maximum Forward Voltage at I
F
=100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
R
θ
JA
T
j
T
s
Value
500
1.0
0.3
- 55 to + 175
- 55 to + 175
Unit
mW
V
K / mW
°
C
°
C
Note
: 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
UPDATE : JANUARY 18, 2002
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